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t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 1 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com qfn 5x5 mm 32l p ad configuration p ad no. symbol 1 - 2, 4, 6, 8 - 9, 16 - 17, 19, 21, 23 - 25, 32 gnd 3, 7, 10 - 11, 13, 15, 18, 22, 26, 28, 30 - 31 nc 5 rf in 12, 29 gate1 14, 27 gate 2 20 rf out, drain applications ? commercial and military ra dar ? communication s ? electronic warfare general description triquints tga2216 - sm is a wide b and cascode a mplifier fabricated on triquint s production 0.25um gan on sic process . the casco de configuration offers exceptional wideband performance as well as support ing 4 0 v operation . the tga2216 - sm operates from 0. 1 - 3. 0 ghz and provides greater than 1 0 w of saturated output power with greater than 1 3 db of large signal gain and greater than 40 % power - added efficiency. t he tga2216 - sm is available in a low - cost, surface mount 32 lead 5x5 ain qfn. it is ideally suited to support both radar and communicatio n applications across defense and commercial markets as well as electronic warfare. the tg a2216 - sm is fully matched to 50? at both rf ports allowing for simple system integration. dc blocks are required on both rf ports and the drain voltage must be injected through an off chip bias - tee on the rf output port . lead - free and rohs compliant. evaluation boards are available upon request. ordering information part eccn description tga2 216 - sm ear99 0.1 C 3. 0 ghz 1 0 w gan power amplifier product features ? frequency range: 0.1 C 3. 0 ghz ? p sat : > 4 0 dbm at p in = 27dbm ? p1db: >35 dbm ? pae : 5 0 % @ midband ? large signal gain: >13 db ? small signal gain: 21 db ? bias : v d = 40 v , i dq = 360 ma , v g 1 = - 2. 4 v typical, v g 2 = +17 .7v typical ? wideband flat gain and power ? package dimensions: 5.0 x 5.0 x 1.45 mm functional block diagram 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 32 31 30 29 28 27 26 25 rf in rf out
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 2 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 80v gate voltage range (v g 1 ) - 8 to 0v gate voltage range (v g 2 ) 0 to 40v drain current (i d ) 760 ma gate current (i g 1 ) - 5 to 5.6ma gate current (i g 2 ) - 5 to 5.6ma power dissipation (p diss ) , 85c 28w input power (p in ) , cw, 50 , 85c, 33 dbm input power (p in ) , cw, vswr 10 :1, v d = 4 0 v, 85c 27 dbm channel t emperature (t ch ) 275c mounting temperature (30 seconds) 320c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 40 v drain current (i d q ) 360 m a gate voltage (v g 1 ) - 2.4 v (typ.) gate voltage (v g 2 ) +17 .7v (typ.) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 40 v, i d q = 360 m a, v g 1 = - 2.4 v typical , v g 2 = +17 .7v typical parameter min typical max units operational frequency range 0. 1 3. 0 ghz small signal gain 2 1 db input return loss > 8 db output return loss > 11 db output power (pin = 27 dbm) > 40 db m power added efficiency (pin = 27 dbm) 50 (mid band) % power @ 1db compression (p1db) > 3 5 db m im3 @ 120ma , p out /t one = 3 0 dbm - 2 5 dbc im5 @ 120ma , p out /tone = 30 dbm - 3 3 dbc small signal gain temperature coefficient - 0.0 3 db/ c output power temperature coefficient - 0.00 7 dbm/ c recommended operating voltage: 40 48 v
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 3 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c , v d (2) = 40 v (cw) i d q = 360ma, i d _drive = 610ma p in = 27dbm, p out = 40dbm, p diss = 15w 6.32 oc/w channel temperature (t ch ) (under rf drive) 179 c median lifetime (t m ) 7.99 x 10^7 hrs notes: 1. thermal resistance measured to back of package. 2. the drain voltage for cascode amplifier transistor is ? of the v d . test conditions: v d = 40 v; failure criteria = 10% reduction in i d_max 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13 5.0 5.5 6.0 6.5 7.0 7.5 8.0 6 8 10 12 14 16 18 20 22 r jc (c/w) p diss (w) thermal resistance vs. p diss t base = +85 c cw 6 7 8 9 10 11 12 13 14 15 16 0 0.5 1 1.5 2 2.5 3 3.5 4 power dissipation (w) frequency (ghz) p diss vs. frequency vs. t base -40c +25c +85c p in = 27dbm v d = 40v, i dq = 360ma
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 4 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) typical performance : small signal 9 12 15 18 21 24 27 0 0.5 1 1.5 2 2.5 3 3.5 4 s21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 40v, i dq = 360ma 9 12 15 18 21 24 27 0 0.5 1 1.5 2 2.5 3 3.5 4 s21 (db) frequency (ghz) gain vs. frequency vs. i d 120ma 240ma 360ma temp. = +25 c v d = 40v -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c v d = 40v, i dq = 360ma -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s11 (db) frequency (ghz) input return loss vs. freq. vs. i d 120ma 240ma 360ma v d = 40v temp. = +25 c -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. -40c +25c +85c v d = 40v, i dq = 360ma -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s22 (db) frequency (ghz) output return loss vs. freq. vs. i d 120ma 240ma 360ma v d = 40v temp. = +25 c
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 5 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) 35 36 37 38 39 40 41 42 43 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. i dq 120ma 240ma 360ma p in = 27dbm temp. = +25 c v d = 40v 200 300 400 500 600 700 800 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current (ma) frequency (ghz) drain current vs. frequency vs. i dq 40v120ma 40v240ma 40v360ma p in = 27dbm temp. = +25 c -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1 1.5 2 2.5 3 3.5 4 gate1 current (ma) frequency (ghz) gate1 current vs. frequency vs. i dq 40v120ma 40v240ma 40v360ma p in = 27dbm temp. = +25 c -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1 1.5 2 2.5 3 3.5 4 gate2 current (ma) frequency (ghz) gate2 current vs. frequency vs. i dq 40v120ma 40v240ma 40v360ma p in = 27dbm temp. = +25 c 30 35 40 45 50 55 60 65 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. i dq 120ma 240ma 360ma p in = 27dbm temp. = +25 c v d = 40v
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 6 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) 35 36 37 38 39 40 41 42 43 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 40v, i dq = 360ma 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 27dbm v d = 40v, i dq = 360ma 200 300 400 500 600 700 800 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 40v, i dq = 360ma -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1 1.5 2 2.5 3 3.5 4 gate1 current (ma) frequency (ghz) gate1 current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 40v, i dq = 360ma -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1 1.5 2 2.5 3 3.5 4 gate2 current (ma) frequency (ghz) gate2 current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 40v, i dq = 360ma
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 7 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) 35 36 37 38 39 40 41 42 43 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. freq vs. input power 22dbm 24dbm 26dbm 27dbm temp. = +25 c v d = 40v, i dq = 360ma 30 35 40 45 50 55 60 65 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. input power 27dbm 26dbm 24dbm 22dbm temp. = +25 c v d = 40v, i dq = 360ma 20 22 24 26 28 30 32 34 36 38 40 42 0 3 6 9 12 15 18 21 24 27 p out (dbm) input power (dbm) output power vs. input power vs. freq. 0.2ghz 1.0ghz 2.0ghz 3.0ghz temp. = +25 c v d = 40v, i dq = 360ma 0 10 20 30 40 50 60 0 3 6 9 12 15 18 21 24 27 pae (%) input power (dbm) pae vs. input power vs. freq. 0.2ghz 1.0ghz 2.0ghz 3.0ghz temp. = +25 c v d = 40v, i dq = 360ma 100 200 300 400 500 600 700 0 3 6 9 12 15 18 21 24 27 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 0.2ghz 1.0ghz 2.0ghz 3.0ghz temp. = +25 c v d = 40v, i dq = 360ma
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 8 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : linearity the plots reflect performance measured with an external coaxial bias tee and dc blocks (s ee application circuit on page 1 1 ) -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq v d = 40v, 2.0ghz, 1mhz tone spacing temp. = +25 c i dq = 120 ma i dq = 240 ma i dq = 360 ma -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. temperature v d = 40v, i dq = 360ma, 2.0ghz, 1mhz tone spacing - 40 c +25 c +85 c -120 -105 -90 -75 -60 -45 -30 -15 0 10 15 20 25 30 35 40 im 5 (dbc) output power per tone (dbm) im 5 vs. output power vs. i dq v d = 40 v, 2.0 ghz, 1 mhz tone spacing temp. = + 25 c i dq = 120 ma i dq = 240 ma i dq = 360 ma -120 -105 -90 -75 -60 -45 -30 -15 0 10 15 20 25 30 35 40 im 5 (dbc) output power per tone (dbm) im 5 vs. output power vs. temperature v d = 40 v, i dq = 360 ma, 2.0 ghz, 1 mhz tone spacing - 40 c + 25 c + 85 c -120 -105 -90 -75 -60 -45 -30 -15 0 10 15 20 25 30 35 40 im 5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency v d = 40 v, i dq = 360 ma, 1 mhz tone spacing temp. = +25 c 2.5 ghz 2.0 ghz 3.0 ghz -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency 2.0ghz 2.5ghz 3.0ghz v d = 40v, i dq = 360ma, 1mhz tone spacing temp. = +25 c
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 9 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : linearity the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. freq. v d = 40v, i dq = 360ma temp. = +25 c 3.0ghz 2.0ghz 1.0ghz -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. freq. v d = 40v, i dq = 360ma temp. = +25 c 3.0ghz 2.0ghz 1.0ghz -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. temp. v d = 40v, i dq = 360ma freq. = 2.0ghz +85 c +25 c - 40 c -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. temp. v d = 40v, i dq = 360ma freq. = 2.0ghz +85 c +25 c - 40 c -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. i dq freq. = 2.0ghz temp. = +25 c 40v360ma 40v240ma 40v120ma -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. i dq freq. = 2.0ghz temp. = +25 c 40v360ma 40v240ma 40v120ma
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 10 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (cw) , on - board vs. external coaxial bias - t the plots below reflect performance measured between external bias tee and on - board bias tee ( see application circuit on pages 11 and 1 3 ) 35 36 37 38 39 40 41 42 43 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. freq vs. input power external bias-t on-board bias-t temp. = +25 c v d = 40v, i dq = 360ma p in = 27dbm 30 35 40 45 50 55 60 65 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. input power external bias-t on-board bias-t temp. = +25 c v d = 40v, i dq = 360ma p in = 27dbm
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 11 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com note s : 1. v g1 & v g2 can be biased from either side (top or bottom.) 2. coaxial input dc block (c11 ) is used for input port (rf in.) 3. external wide bandwidth b ias - t ee is used for output port (rf out). v d is applied through the o utput bias - tee . application circuit ( coaxial input dc block and coaxial output bias tee ) bias - up procedure 1. set i d limit to 720ma, i g 1 & i g 2 limit to 5ma 2. set v g 1 to - 5.0v 3. set v g 2 to (v d /2) - 2.7v or 40v/2 - 2.7v = 17 .3v 4. set v d +40 v 5. adjust v g 1 more positive until i dq = 360ma (v g 1 ~ - 2.4 v typical) 6. adjust v g2 to (v d /2) + v g1 ; (v g 2 ~ + 17 .7v typical) 7. apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g 1 to - 5.0v. ensure i dq ~ 0ma 3. reduce v g 2 to 0v. 4. set v d to 0v 5. turn off v d supply 6. turn off v g 2 supply 7. turn off v g 1 supply
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 12 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly drawing (coaxial input dc block and coaxial output bias tee) bill of materials reference design value description manufacturer part number c1 , c4, c5, c8 1u f cap, 1206, 50v, 10%, x7r various c 2, c3, c 6 , c7 1000 p f cap, 0402, 10 0v, 10%, x7r various c11 dc block various r1 C r8 10? res, 0402 various
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 13 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com note s : 1. performance of the dut with surface mount dc blocks and bias tee components may be degraded relative to the coaxial option. these components should be optimize d for the desired operational band width . 2. v g1 & v g2 can be biased from either side (top or bottom.) application circuit (option with board - level dc blocks and o utput b ias t ee )
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 14 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board layout w ith on - b oard dc b locks and o utput bia s - t option bill of materials for on - board bias - tee reference design value description manufacturer part number c1, c4, c5, c8 1uf cap, 1206, 50v, 10%, x7r c2 - c3, c6 - c7, c9 , c1 2 , c1 3 1000pf cap, 0402 , 10 0v, 10%, x 7 r various c1 0 0.01uf cap, 1206, 100v, 10%, x 7 r various l1 330nh ind , 1206, 100v, 10%, x 7 r various r1 C r10 10? res, 0402 various
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 15 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com pin layout pin layout pin description pin no. symbol description 1 - 2 , 4, 6, 8 - 9, 16 - 17, 19, 21, 23 - 25, 32 gnd connected to ground paddle (pin 33); must be grounded on pcb . 3 , 7, 10 - 11, 13, 15, 18, 22 , 26 , 28, 30 - 31 nc no connection . 5 rf in in put; matched to 50 . 12 , 29 gate1 gate voltage 1 ; bias network is required; see recommended a pplication information on page 11 . 14 , 27 gate 2 gate voltage 2 ; bias network is required; see recommended a pplication information on page 11 . 2 0 rf out/ drain out put; matched to 50 . 33 gnd ground paddle. multiple vias should be employed to minimize inductance and thermal resistance.
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 16 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical information units: inches tolerances: unless specified x.xx = 0.01 x.xxx = 0.005 materials: base: ceramic lid: plastic all metalized features are gold plated part is epoxy sealed marking: 2216 : part number yy: part assembly year ww: part assembly week mxxx: batch id
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 17 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com recommended soldering temperature profile
t ga2216 - sm 0.1 C 3.0ghz 10w gan power amplifier preliminary datasheet: rev - 05 - 05 - 14 - 18 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user . all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or aut horized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : ear99

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